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| MMBT4124LT1G General Purpose Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 5.0 200 Unit Vdc Vdc Vdc mAdc 3 Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit W mW/C C/W W mW/C C/W C 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg MARKING DIAGRAM ZC M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ZC = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4124L T1G Package SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 2 1 Publication Order Number: MMBT4124LT1/D MMBT4124LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IE = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) Current Gain - High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Cibo Ccb hfe |hfe| 300 - - 120 - 8.0 4.0 480 MHz pF pF - - hFE 120 60 - - 360 - 0.3 0.95 - V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 5.0 - - - - - 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit VCE(sat) VBE(sat) Vdc Vdc 3.0 120 - - 480 5.0 NF dB 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo TIME (ns) 200 100 70 50 30 20 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 tf tr td ts 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 Figure 1. Capacitance Figure 2. Switching Times http://onsemi.com 2 MMBT4124LT1G AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100 SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 kW IC = 50 mA 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 100 mA IC = 1 mA IC = 0.5 mA IC = 50 mA 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kW) 40 100 Figure 3. Frequency Variations Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 300 hoe , OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 hfe , CURRENT GAIN 200 100 70 50 2 1 30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 5. Current Gain Figure 6. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 10 hie , INPUT IMPEDANCE (k ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 Figure 7. Input Impedance http://onsemi.com 3 Figure 8. Voltage Feedback Ratio MMBT4124LT1G STATIC CHARACTERISTICS 2.0 h FE , DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 0.2 - 55C +25C VCE = 1 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 9. DC Current Gain VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 1.0 0.5 qVC for VCE(sat) 0 - 0.5 - 1.0 - 1.5 - 2.0 qVB for VBE(sat) - 55C to +25C +25C to +125C - 55C to +25C +25C to +125C 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 MMBT4124LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative http://onsemi.com 5 MMBT4124LT1/D |
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